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SO-DIMM DDR4 Memory

Improve performance up to 50% (compared to SO-DDR3.) with Advantech! We offer industrial grade SO-DDR4 2666/2400/2133 memory with 30μ" gold plating connector (260 pin) featuring 1.2v low operating voltage with faster burst accesses. With rigorous reliability, vibration tests, and 0 ~ 85℃ (32 ~ 185℉) wide operating temperature ranges, our certified SODIMM DDR4 is fully suitable for enterprise, embedded, and ultra thin mobile devices like micro-server applications.

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Part Number Description Memory
    Capacity Chip Manufacturer Chip Organization Feature Manufacturer Operating Temperature PCB Height
Part Number Description Memory
    Capacity Chip Manufacturer Chip Organization Feature Manufacturer Operating Temperature PCB Height
96SD4-16G3200NN-MI Micron 16B SO-DDR4-3200 260Pin 1Gx8 1.2V Unbuffered 16 GB MICRON 1 G x 8 Unbuffered Micron 0 ~ 95°C (32 ~ 203°F) 1.18"
96SD4-4G3200NN-MI Micron 4GB SO-DDR4-3200 260Pin 512Mx16 1.2V Unbuffered 4 GB MICRON 512 M x 16 Unbuffered Micron 0 ~ 95°C (32 ~ 203°F) 1.18"
96SD4-8G3200NN-MI Micron 8GB SO-DDR4-3200 260Pin 1Gx8 1.2V Unbuffered 8 GB MICRON 1 G x 8 Unbuffered Micron 0 ~ 95°C (32 ~ 203°F) 1.18"
AQD-SD4L4GN24-HGI Advantech 4G Anti-sulfur and Wide Temp SO-DDR4-2400 260Pin 512X8 1.2V Hynix Chip 4 GB HYNIX 512 M x 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4L8GN24-HEI Advantech 8G Anti-sulfur and Wide Temp SO-DDR4-2400 260Pin 1GX8 1.2V Hynix Chip 8 GB HYNIX 1 G x 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U16E24-HE Advantech 16G DDR4-2400 260Pin 1GX8 1.2V ECC Hynix Chip 16 GB HYNIX 1G X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U16E24-SE Advantech 16G SO-DDR4-2400 260Pin 1GX8 1.2V ECC Samsung Chip 16 GB SAMSUNG 1G X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U16E26-SE Advantech 16G SO-DDR4-2666 260Pin 1Gx8 1.2V ECC Samsung Chip 16 GB SAMSUNG 1G X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U16N24-HE Advantech 16G SO-DDR4-2400 260Pin 1GX8 1.2V Unbuffered Hynix Chip 16 GB HYNIX 1G X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U16N24-SE Advantech 16G SO-DDR4-2400 260Pin 1GX8 1.2V Unbuffered Samsung Chip 16 GB SAMSUNG 1G X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U16N26-SE Advantech 16G SO-DDR4-2666 1GX8 1.2V Samsung IC 16 GB SAMSUNG 1 G x 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U4GE24-HG Advantech 4G SO-DDR4-2400 260Pin 512MX8 1.2V ECC Hynix Chip 4 GB HYNIX 512M X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U4GE24-SG Advantech 4G SO-DDR4-2400 260Pin 512MX8 1.2V ECC Samsung Chip 4 GB SAMSUNG 512M X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U4GE26-SG Advantech 4G SO-DDR4-2666 260Pin 512Mx8 1.2V ECC Samsung Chip 4 GB SAMSUNG 512M X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U4GN24-HP Advantech 4G SO-DDR4-2400 260Pin 512X16 1.2V Unbuffered Hynix Chip 4 GB HYNIX 512 M x 16 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U4GN24-SG Advantech 4G SO-DDR4-2400 260Pin 512X8 1.2V Unbuffered Samsung Chip 4 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U4GN24-SGW Advantech 4G Anti-sulfur and Wide Temp SO-DDR4-2400 260Pin 512X8 1.2V Samsung Chip 4 GB SAMSUNG 512M X 8 Unbuffered Advantech -40 ~ 85°C (-40 ~ 185°F) 1.18"
AQD-SD4U4GN26-SG Advantech 4G SO-DDR4-2666 512X8 1.2V Samsung IC 4 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U8GE24-SE Advantech 8G SO-DDR4-2400 260Pin 1GX8 1.2V ECC Samsung Chip 8 GB SAMSUNG 1G X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U8GE26-SE Advantech 8G SO-DDR4-2666 260Pin 1Gx8 1.2V ECC Samsung Chip 8 GB SAMSUNG 1G X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U8GN24-HE Advantech 8G SO-DDR4-2400 260Pin 1GX8 1.2V Unbuffered Hynix Chip 8 GB HYNIX 1G X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U8GN24-SE Advantech 8G SO-DDR4-2400 260Pin 1GX8 1.2V Unbuffered Samsung Chip 8 GB SAMSUNG 1G X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD4U8GN24-SEW Advantech 8G Anti-sulfur and Wide Temp SO-DDR4-2400 260Pin 1GX8 1.2V Samsung Chip 8 GB SAMSUNG 1 G x 8 Unbuffered Advantech -40 ~ 85°C (-40 ~ 185°F) 1.18"
AQD-SD4U8GN26-SE Advantech 8G SO-DDR4-2666 1GX8 1.2V Samsung IC 8 GB SAMSUNG 1 G x 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"

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